Cross-sectional Kelvin probe force microscopy on III– V epitaxial …– Blog site • by NanoWorld ®

The advancement of photovoltaic (PV) innovations has actually advanced substantially over the previous twenty years as an outcome of substantial developments in solar battery gadget engineering and product science. *

As a repercussion, solar batteries have actually become intricate structures including various layers and user interfaces. The ability to carry out regional examinations at the nanoscale level that supply details on the electrical residential or commercial properties of products and along physical user interfaces is ending up being important for solar photovoltaic gadget effectiveness enhancement. *

The ability to carry out regional examinations at the nanoscale level that supply details on the electrical residential or commercial properties of products and along physical user interfaces is ending up being important for solar photovoltaic gadget effectiveness enhancement. *

Multilayer III– V-based solar batteries are intricate gadgets including numerous layers and user interfaces. *

The research study and the understanding of the systems that happen at the user interfaces is important for effectiveness enhancement. *

Electrical measurements based upon scanning probe microscopy (SPM) enable the analysis of two-dimensional (2D) includes at the surface area and along a physical random sample of nanoscale semiconductor structures. *

Amongst the variety of SPM strategies readily available, Kelvin probe force microscopy (KPFM) is an application of the atomic force microscopic lense (AFM) for the examination of the surface area capacity with nanometric resolution. KPFM is an important investigative method for the research study of work functions through the measurement of the contact prospective distinction VCPD, that is, the distinction in between the electrostatic capacity at the surface area of the examined structure which of the KPFM probe. *

In the short article “ Cross-sectional Kelvin probe force microscopy on III– V epitaxial multilayer stacks: obstacles and viewpoints” Mattia da Lisca, José Alvarez, James P. Connolly, Nicolas Vaissiere, Karim Mekhazni, Jean Decobert and Jean-Paul Kleider use frequency-modulated Kelvin probe force microscopy (FM-KPFM) under ambient conditions to examine the ability of this method for the analysis of an InP/GaInAs( P) multilayer stack. *

KPFM exposes a strong reliance on the regional doping concentration, permitting the detection of the surface area capacity of layers with a resolution as low as 20 nm. *

The analysis of the surface area capacity enabled the recognition of area charge areas and, therefore, the existence of numerous junctions along the stack. Additionally, a contrast improvement in the surface area prospective image was observed when KPFM was carried out under lighting, which is evaluated in regards to the decrease of surface area band flexing caused by surface area flaws by photogenerated provider circulations. The analysis of the KPFM information was helped by ways of theoretical modelling imitating the energy bands profile and KPFM measurements. *

KPFM was carried out utilizing a scanning probe microscopy system under ambient conditions and run in the frequency-modulated KPFM (FM-KPFM) mode utilizing a two-pass scanning mode, where the 2nd pass was carried out at a consistent range of 10 nm from the sample surface area. *

The FM-KPFM mode was picked over the amplitude-modulation mode (AM-KPFM) considering that it is popular that it supplies much better spatial resolution. In specific, in AM-KPFM the electrical force in between the pointer and the sample is straight examined, whereas in FM-KPFM the gradient of the force is evaluated. As an outcome, FM-KPFM is more conscious regional pointer pinnacle– sample surface area interactions; for that reason, long-range electrostatic interactions of the cantilever are minimized, along with the result of parasitic capacitances. In addition, in FM-KPFM, surface area prospective measurements are less depending on the lift-height pointer– sample range than in AM-KPFM considering that this mode is less conscious fixed offsets caused by capacitive coupling or crosstalk. *

The laser beam deflection system in the author’s AFM utilizes a laser wavelength of 1310 nm, which is well listed below the bandgap of the sample; for that reason, the parasitic laser absorption, which might hinder the KPFM measurement, is minimized to minimal levels. Extremely drugged NanoWorld n+- Si ARROW-EFM suggestions (normal AFM pointer radius < < 25 nm) with a conductive Pt/Ir finish at a common resonance frequency of 75 kHz were utilized. *

Figure 4 from “Cross-sectional Kelvin probe force microscopy on III–V epitaxial multilayer stacks: challenges and perspectives” by Mattia da Lisca et al : KPFM measurement under ambient conditions on the surface cross section of the sample under illumination: (a) topography and (b) VCPD image. A vertical coloured bar is included to ease the identification of the different layers. The profile in (c) corresponds to the region identified by the dotted white segments in (b), each point of the profile (vertical) direction being an average of 207 points over a width of 0.7 μm along the x axis. Several regions along the structure have been highlighted using different colours (see text). The black arrow indicates the space charge region at the InP:nid/InP:Zn interface. Highly doped NanoWorld n+-Si ARROW-EFM AFM probes (typical AFM tip radius < 25 nm) with a conductive Pt/Ir coating at a typical resonance frequency of 75 kHz were used.
Figure 4 from “Cross-sectional Kelvin probe force microscopy on III– V epitaxial multilayer stacks: obstacles and viewpoints” by Mattia da Lisca et al:
KPFM measurement under ambient conditions on the surface area random sample of the sample under lighting: (a) topography and (b) VCPD image. A vertical coloured bar is consisted of to alleviate the recognition of the various layers. The profile in (c) represents the area recognized by the dotted white sections in (b), each point of the profile (vertical) instructions being approximately 207 points over a width of 0.7 μm along the x axis. A number of areas along the structure have actually been highlighted utilizing various colours (see text). The black arrow shows the area charge area at the InP: nid/InP: Zn user interface.

* Mattia da Lisca, José Alvarez, James P. Connolly, Nicolas Vaissiere, Karim Mekhazni, Jean Decobert and Jean-Paul Kleider
Cross-sectional Kelvin probe force microscopy on III– V epitaxial multilayer stacks: obstacles and viewpoints
Beilstein Journal of Nanotechnology 2023, 14, 725– 737
DOI: https://doi.org/10.3762/bjnano.14.59

The short article “ Cross-sectional Kelvin probe force microscopy on III– V epitaxial multilayer stacks: obstacles and viewpoints” by Mattia da Lisca, José Alvarez, James P. Connolly, Nicolas Vaissiere, Karim Mekhazni, Jean Decobert and Jean-Paul Kleider is certified under an Innovative Commons Attribution 4.0 International License, which allows usage, sharing, adjustment, circulation and recreation in any medium or format, as long as you provide proper credit to the initial author( s) and the source, supply a link to the Creative Commons license, and suggest if modifications were made. The images or other third-party product in this short article are consisted of in the short article’s Creative Commons license, unless suggested otherwise in a credit limit to the product. If product is not consisted of in the short article’s Creative Commons license and your meant usage is not allowed by statutory guideline or surpasses the allowed usage, you will require to acquire authorization straight from the copyright holder. To see a copy of this license, go to https://creativecommons.org/licenses/by/4.0/.

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